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www.irf.com 1 5/11/06 notes through are on page 2 directfet isometric applicable directfet outline and substrate outline (see p.8,9 for details) v dss r ds(on) max qg(typ.) 20v 2.7m ? @v gs = 10v 28nc 3.6m ? @v gs = 4.5v description the IRF6620PBF combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of an so-8 and only 0.7 mm profile. the directfet package i s compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection sol dering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the IRF6620PBF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction an d switching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest g eneration of processors operating at higher frequencies. the IRF6620PBF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including rds(on), gate charge and cdv/dt-induced turn on immunity. the IRF6620PBF offers particu- larly low rds(on) and high cdv/dt immunity for synchronous fet applications . sq sx st mq mx mt IRF6620PBF irf6620trpbf rohs compliant lead-free (qualified up to 260c reflow) application specific mosfets ideal for cpu core dc-dc converters low conduction losses high cdv/dt immunity low profile (<0.7mm) dual sided cooling compatible compatible with existing surface mount techniques directfet power mosfet absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c power dissipation p d @t a = 70c power dissipation w p d @t a = 25c power dissipation e as single pulse avalanche energy mj i ar avalanche current a linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 45 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 1.4 r j-pcb junction-to-pcb mounted 1.0 ??? max. 27 22 220 20 20 150 -40 to + 150 89 0.017 1.8 2.8 39 22
2 www.irf.com s d g click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.16mh, r g = 25 ? , i as = 22a. pulse width 400s; duty cycle 2%. surface mounted on 1 in. square cu board. used double sided cooling, mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermal couple mounted to top (drain) of part.
r is measured at
static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 16 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 2.1 2.7 m ? ??? 2.8 3.6 v gs(th) gate threshold voltage 1.55 ??? 2.45 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -5.8 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 110 ??? ??? s q g total gate charge ??? 28 42 q gs1 pre-vth gate-to-source charge ??? 9.5 ??? q gs2 post-vth gate-to-source charge ??? 3.5 ??? nc q gd gate-to-drain charge ??? 8.8 ??? q godr gate charge overdrive ??? 6.2 ??? see fig. 15 q sw switch charge (q gs2 + q gd ) ??? 12 ??? q oss output charge ??? 16 ??? nc t d(on) turn-on delay time ??? 18 ??? t r rise time ??? 80 ??? t d(off) turn-off delay time ??? 20 ??? ns t f fall time ??? 6.6 ??? c iss input capacitance ??? 4130 ??? c oss output capacitance ??? 1160 ??? pf c rss reverse transfer capacitance ??? 560 ??? diode characteristics parameter min. typ. max. units i s continuous source current@ t c =25c ??? ??? 110 (body diode) a i sm pulsed source current ??? ??? 220 (body diode) v sd diode forward voltage ??? 0.8 1.0 v t rr reverse recovery time ??? 23 35 ns q rr reverse recovery charge ??? 13 20 nc i d = 22a v gs = 0v v ds = 10v i d = 22a t j = 25c, i f = 22a di/dt = 100a/s t j = 25c, i s = 22a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 27a v gs = 4.5v, i d = 22a v ds = v gs , i d = 250a v ds = 16v, v gs = 0v v ds = 16v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 4.5v mosfet symbol clamped inductive load v ds = 10v, i d = 22a conditions ? = 1.0mhz v ds = 10v, v gs = 0v v dd = 16v, v gs = 4.5v v ds = 10v
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 2.7v vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c 2.7v vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v 2.5 3.0 3.5 4.0 4.5 5.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 10v 60s pulse width t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 27a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20406080 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v vds= 10v i d = 20a
4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10. threshold voltage vs. temperature fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 25 50 75 100 125 150 t j , junction temperature (c) 0 30 60 90 120 150 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 1.28011 0.000322 8.72556 0.164798 21.75 2.2576 13.251 69
www.irf.com 5 fig 13c. maximum avalanche energy vs. drain current fig 14a. switching time test circuit fig 14b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - fig 13b. unclamped inductive waveforms fig 13a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 12. on-resistance vs. gate voltage fig 15a. gate charge test circuit fig 15b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.2a 8.4a bottom 22a 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 0 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 27a 1k vcc dut 0 l
6 www.irf.com fig 16.

for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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directfet substrate and pcb layout, mx outline (medium size can, x-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. g = gate d = drain s = source d d d d g s s
www.irf.com 7 directfet outline dimension, mx outline (medium size can, x-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet part marking imperial min 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 min 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.616 0.020 0.08 max 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.676 0.080 0.17 code a b c d e f g h j k l m r p metric dimensions max 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007
8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 5/06 directfet tape & reel dimension (showing component orientation). loaded tape feed direction min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 code a b c d e f g h max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 dimensions metric imperial standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6620trpbf). for 1000 parts on 7" reel, order irf6620tr1pbf
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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